Part Number | NX7002BKR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 60V TO-236AB |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 270mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 23.6pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 310mW (Ta), 1.67W (Tc) |
Rds On (Max) @ Id, Vgs | 2.8 Ohm @ 200mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB (SOT23) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
Hot Offer
NX7002BKR
ST
5516
4.51
Feture Technology Limited
NX7002BKR
STMicroelectronics
6624
5.62
ANCHIP TECHNOLOGY CO., LIMITED
NX7002BKR
STMicroel
8793
1.18
HK HEQING ELECTRONICS LIMITED
NX7002BKR
STMICROELECT
4994
2.29
Hongkong Dasenic Electronic Limited
NX7002BKR IC
ST/MICRON
218
3.4
CIS Ltd (CHECK IC SOLUTION LIMITED)