Description
NTTFS5826NLTAG . WDFN8. (Pb-Free). 1500/Tape & Reel. (Note: Microdot may be in either location). 1. 5826. = Specific Device Code. A. = Assembly Location. NTTFS5826NLTAG . Pb-free. Halide free. Active. N-. Chan nel. Singl e. 60. 20. 3. 20. 19. 32. 24. 8.4. 16. 850. WDF. N-8 /. u8FL. For more information please Mar 13, 2015 NTTFS5826NLTAG . C11. 10uF. 1. 2. J4. ILIMIT. 1. J3. EN. 1. R1. DNP. 2. 1. J7. SYNC. 1. L1. 10uH. C4. 0.015uF. 1. 2. J8. VIN. 1. R3. 232k. 2. 1. Mar 4, 2015 NTTFS5826NLTAG . C57. 22uF. EEE.FK1K220P. Q1. DNP. J16. B2S. 1. 2. C5. DNP. 1. 2. D3. SS3P6. R3. 52.3k. 2. 1. C10. DNP. 1. 2. C22. Mar 25, 2014 Transistor, N-Power MOSFET, 60V, 8A, NTTFS5826NL,. 8-WDFN. ON Semi. NTTFS5826NLTAG . 105. 1. 1. Q2. Transistor, N-Power MOSFET,
Part Number | NTTFS5826NLTAG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 60V 8A 8-WDFN |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 19W (Tc) |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 7.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-WDFN (3.3x3.3) |
Package / Case | 8-PowerWDFN |
Image |
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