Description
RDS(on) Max. ID Max. V(BR)DSS. -11.4 A. Device. Package. Shipping . ORDERING INFORMATION. NTMS4177PR2G . SOIC-8. (Pb-Free). 2500/Tape & Reel. May 12, 2009 SO8 Device: NTMS4177PR2G . Test: High Temperature Reverse Bias (HTRB). Conditions: Ta=150C, Vds= 80% BVdss Rating, Duration NTMS4177PR2G . NTZS3151PT1G. NTJD4158CT2H. NTNUS3171PZT5G. NTZS3151PT1H. NTJS3151PT1G. NTR2101PT1G. NVNUS3171PZT5G. Jan 31, 2008 NTMS4177PR2G . NTMS4872NR2G. MMDF1N05ER2. MMDF1N05ER2G. MMDF2C03HDR2. MMDF2C03HDR2G. MMDF2N02ER2. May 1, 2012 NTMS4177PR2G . NTZS3151PT1H. NTJD4158CT2G. NTNUS3171PZT5G. NVNUS3171PZT5G. NTJD4158CT2H. NTR2101PT1G.
Part Number | NTMS4177PR2G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 30V 6.6A 8-SOIC |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 24V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 840mW (Ta) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 11.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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