Description
NTMD6601NR2G, ON, 8-SOIC (0.154, 3.90mm Width), MOSFET 2N-CH 80V 1.1A 8SOIC, Discrete Semiconductor Products, FETs - Arrays
Part Number | NTMD6601NR2G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 80V 1.1A 8SOIC |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 1.1A |
Rds On (Max) @ Id, Vgs | 215 mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
Power - Max | 600mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Image |
NTMD6601NR2G
STMicroel
10000
0.49
Finestock Electronics HK Limited
NTMD6601NR2G
STMICROELECT
5000
1.4025
Ande Electronics Co., Limited
NTMD6601NR2G
ST/MICRON
500
2.315
King-Pai Technology (HK) Co.,Limited
NTMD6601NR2G
ST
3000
3.2275
ONSTAR ELECTRONICS CO., LIMITED
NTMD6601NR2G
STMicroelectronics
8000
4.14
MY Group (Asia) Limited