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Description
NTJD4152PT1G . TK. SC 88. (Pb Free). 3000 / Tape & Reel. NTJD4152PT2G. TK. NVJD4152PT1G*. VTK. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging. Specifications Brochure, BRD8011/D. *NV Prefix for Automotive and Other Coss. Typ. (pF). Crss. Typ. (pF). Pac kag e. Typ e. NTJD4152PT1G . Pb-free. Halide free. Active. P-. Cha nne l. Dua l. 20. 12. 1.2. 0.8. 8. 0.2. 72. 500 260. 2.2. 0.6. 5. 155 25. 18. SC-. 88-. 6 /. SC-. 70-. 6 /. SO. T-. 363. -6. For more information please contact your local sales support at www.onsemi.com. Created on: 5/22/ 2017. Sep 28, 2012 R14A. 22. R14A. 22. Barrel Power Jack. 2.0mm ID, 5.5mm OD. J1. ADC-043A-1. Barrel Power Jack. 2.0mm ID, 5.5mm OD. J1. ADC-043A-1. 1. 3. 2. R2. 1.5K. R2. 1.5K. Q6A. NTJD4152PT1G . Q6A. NTJD4152PT1G . C30. 0.1uF. C30. 0.1uF. Q2A . MBT3904DW1T1G. Q2A. MBT3904DW1T1G. R7C. 10K. R7C. This is an updated notification to FPCN16658, FPCN16658A, and UN16658 which announces to. Customers that ON Semiconductor is revising their change over date for Die sourcing to the UMC. Wafer Fab facility. Products will now have a Date Code of the Work Week 27, 2012 or newer. May 22, 2007 ON Semiconductor is adding wafer fabrication capacity for their N-channel and P- channel. Trench MOSFET technology platforms, with the qualification of their internal wafer fab site in. Aizu, Japan. The facility is an already a qualified site for the N-channel Trench and High Cell. Density Planar wafer
| Part Number | NTJD4152PT1G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | STMicroelectronics |
| Description | MOSFET 2P-CH 20V 0.88A SOT-363 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 880mA |
| Rds On (Max) @ Id, Vgs | 260 mOhm @ 880mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 155pF @ 20V |
| Power - Max | 272mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Image |  |
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