Part Number | NSBA123JDXV6T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | STMicroelectronics |
Description | TRANS 2PNP PREBIAS 0.5W SOT563 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Image |
NSBA123JDXV6T1G
STMicroel
1898
1.6
ATLANTIC TECHNOLOGY LIMITED
NSBA123JDXV6T1G
STMICROELECT
304
2.825
ONSTAR ELECTRONICS CO., LIMITED
NSBA123JDXV6T1G
ST/MICRON
6876
4.05
MY Group (Asia) Limited
NSBA123JDXV6T1G
ST
3448
5.275
Yingxinyuan INT'L (Group) Limited
NSBA123JDXV6T1G
STMicroelectronics
8806
6.5
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED