Description
Publication Order Number: NGTB40N120FL3W/D. NGTB40N120FL3WG . IGBT - Ultra Field Stop. This Insulated Gate Bipolar Transistor (IGBT) features a robust NGTB40N120FL3WG . Pb-free. Halide free. Active. 1200. 40. 1.7. 3. 1.1. 1.6. 86. 12. 212. 454. Yes. TO-. 247-3. For more information please contact your local Dec 17, 2015 This application note explains the most common related issues for the identification of suitable gate resistors for power electronic devices.
Part Number | NGTB40N120FL3WG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | IGBT 1200V 160A TO247 |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 160A |
Current - Collector Pulsed (Icm) | 160A |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
Power - Max | 454W |
Switching Energy | 1.6mJ (on), 1.1mJ (off) |
Input Type | Standard |
Gate Charge | 212nC |
Td (on/off) @ 25°C | 18ns/145ns |
Test Condition | 600V, 40A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 136ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247-3 |
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