Description
NGTB25N120IHLWG . IGBT. This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides. NGTB25N120IHLWG . Pb-free. Active. 1200. 25. 1.85. 1.7. 0.8. 200. 192. Yes. TO- . 247-3. For more information please contact your local sales support at May 7, 2017 0.004. R118. 0.004. R120. TP25. TP36. W. _PH. AS. E_R. EF. 3. 1. 2. 1200 V. 50 A. Q1. NGTB25N120IHLWG . DNP. BRAKE_IGBT_GATE. 3 F.
Part Number | NGTB25N120IHLWG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | IGBT 1200V 50A 192W TO247-3 |
Series | - |
Packaging | Tube |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 50A |
Current - Collector Pulsed (Icm) | 200A |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 25A |
Power - Max | 192W |
Switching Energy | 800µJ (off) |
Input Type | Standard |
Gate Charge | 200nC |
Td (on/off) @ 25°C | -/235ns |
Test Condition | 600V, 25A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Image |
NGTB25N120IHLWG
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5000
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