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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Dec 1, 1998 Absolute Maximum Ratings TA = 25 C unless otherwise noted. Symbol. Parameter. NDT456P . Units. VDSS. Drain-Source Voltage. -30. V. MOSFET to control the power to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This configuration is suitable for powering MOSFET to control the power to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This configuration is suitable for powering Fairchild NDT456P . Q142. 1 n-channel FET (SOT23). Central Semi 2N7002. R0, R12. 2. 0I Q5% resistors (0603). R9. 1. 4.7kI Q5% resistor (0603). R14, R15. 2. NXP small-signal N- and. P-channel MOSFETs. Our advanced MOSFET solutions deliver the flexibility and performance that todays market demands. Choose

Part Number NDT456P
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET P-CH 30V 7.5A SOT-223-4
Series -
Packaging Cut Tape (CT)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3W (Ta)
Rds On (Max) @ Id, Vgs 30 mOhm @ 7.5A, 10V
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-4
Package / Case TO-261-4, TO-261AA
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.95   Highest Price: $2.58
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D/C
Qty
Price (USD)
Company
Part Number:

NDT456P

Brand:

STMicroelectronics

D/C:
22+
Qty:

4000

Price (USD):

2.58

Company:

Hong Kong Capital Industrial Co.,Ltd

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Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

NDT456P

Brand:

STMicroel

D/C:
Qty:

6500

Price (USD):

0.95

Company:

HK HEQING ELECTRONICS LIMITED

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Part Number:

NDT456P

Brand:

STMICROELECT

D/C:
06+
Qty:

7000

Price (USD):

1.3575

Company:

Good Time Electronic Group Limited

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Part Number:

NDT456P

Brand:

ST/MICRON

D/C:
Qty:

21000

Price (USD):

1.765

Company:

FLOWER GROUP(HK)CO.,LTD

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Part Number:

NDT456P

Brand:

ST

D/C:
Qty:

3142

Price (USD):

2.1725

Company:

N&S Electronic Co., Limited

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NDT456P Ref.

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