Part Number | NDS356P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 20V 1.1A SSOT-3 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 210 mOhm @ 1.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
NDS356P
STMicroel
30000
1.27
QUARKTWIN TECHNOLOGY LIMITED
NDS356P
STMICROELECT
35800
1.8275
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NDS356P
ST/MICRON
42748
2.385
Shenzhen hsw Technology Co., Ltd
NDS356P
ST
250178
2.9425
Cicotex Electronics (HK) Limited
NDS356P
STMicroelectronics
4868000
3.5
Shenzhen WTX Capacitor Co., Ltd.