Part Number | NDD04N60Z-1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 4A IPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
NDD04N60Z-1G
STMicroel
7597
0.41
Semic Pte. Ltd
NDD04N60Z-1G
STMICROELECT
9353
1.4825
CIS Ltd (CHECK IC SOLUTION LIMITED)
NDD04N60Z-1G
ST/MICRON
306
2.555
Viassion Technology Co., Limited
NDD04N60Z-1G
ST
1035
3.6275
N&S Electronic Co., Limited
NDD04N60Z-1G
STMicroelectronics
3204
4.7
Yingxinyuan INT'L (Group) Limited