Part Number | NDD03N80Z-1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 800V 2.9A IPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 96W (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 Ohm @ 1.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
NDD03N80Z-1G
STMicroel
1000
1.39
MY Group (Asia) Limited
NDD03N80Z-1G
STMICROELECT
100
2.4575
RX ELECTRONICS LIMITED
NDD03N80Z-1G
ST/MICRON
50
3.525
ASSET GREEN TECH, INC
NDD03N80Z-1G
ST
3260
4.5925
ONSTAR ELECTRONICS CO., LIMITED
NDD03N80Z-1G
STMicroelectronics
12110
5.66
HK HEQING ELECTRONICS LIMITED