Part Number | MUN5330DW1T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | STMicroelectronics |
Description | TRANS PREBIAS NPN/PNP SOT363 |
Series | - |
Packaging | |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 1k |
Resistor - Emitter Base (R2) (Ohms) | 1k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Image |
MUN5330DW1T1G
STMicroel
6000
0.22
ZY (HK) TECHNOLOGY LIMITED
MUN5330DW1T1G
STMICROELECT
665
0.8875
Yingxinyuan INT'L (Group) Limited
MUN5330DW1T1G
ST/MICRON
180386
1.555
Cicotex Electronics (HK) Limited
MUN5330DW1T1G
ST
10000
2.2225
Shenzhen Taochip Electronic Co.,Ltd
MUN5330DW1T1G
STMicroelectronics
13100
2.89
CIS Ltd (CHECK IC SOLUTION LIMITED)