Part Number | MUN5212T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | STMicroelectronics |
Description | TRANS PREBIAS NPN 202MW SC70-3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 202mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SC-70-3 (SOT323) |
Image |
MUN5212T1G
STMicroel
42523
1.45
Shenzhen hsw Technology Co., Ltd
MUN5212T1G
STMICROELECT
6000
2.2575
ZY (HK) TECHNOLOGY LIMITED
MUN5212T1G
ST/MICRON
9000
3.065
Hong Kong Capital Industrial Co.,Ltd
MUN5212T1G
ST
30000
3.8725
Bonase Electronics (HK) Co., Limited
MUN5212T1G
STMicroelectronics
9000
4.68
SUMMER TECH(HK) LIMITED