Part Number | MUN2212T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | STMicroelectronics |
Description | TRANS PREBIAS NPN 338MW SC59 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 338mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SC-59 |
Image |
MUN2212T1G
STMicroel
30000
0.44
Hong Kong Yulu International Limited
MUN2212T1G
STMICROELECT
9760
1.3925
HK HEQING ELECTRONICS LIMITED
MUN2212T1G
ST/MICRON
55200
2.345
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MUN2212T1G
ST
1437
3.2975
HONG KONG HORNG SHING LIMITED
MUN2212T1G
STMicroelectronics
15610
4.25
N&S Electronic Co., Limited