Part Number | MTY100N10E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V 100A TO-264 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 378nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10640pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-264 |
Package / Case | TO-264-3, TO-264AA |
Image |
MTY100N10E
STMicroel
10000
0.1
Shenzhen Chuanlan Electronics Ltd
MTY100N10E
STMICROELECT
14888
0.8925
CIS Ltd (CHECK IC SOLUTION LIMITED)
MTY100N10E
ST/MICRON
1000
1.685
MY Group (Asia) Limited
MTY100N10E
ST
16000
2.4775
Finestock Electronics HK Limited
MTY100N10E
STMicroelectronics
3260
3.27
ONSTAR ELECTRONICS CO., LIMITED