Description
MTP2P50E /D. MTP2P50EG. Power MOSFET. 2 Amps, 500 Volts, P Channel TO 220. This high voltage MOSFET uses an advanced termination scheme. Nov 3, 2000 TITLE: TECHNICAL ALERT FOR MTP2P50E -UPDATE. EFFECTIVE DATE: 04- Nov-2000. AFFECTED CHANGE CATEGORY(S): AFFECTED Feb 18, 2010 MTP2P50E . MTP2P50EG. MTP50P03HDL. MTP50P03HDLG. MTP75N05HD. NTP125N02R. NTP125N02RG. NTP13N10. NTP13N10G. Aug 11, 2001 MTP2P50E . MTP50P03HDL. MTP60N06HD. MTP75N03HDL. MTP75N05HD. MTP75N06HD. NTP10N40. NTP10N60. NTP12N50. NTP13N10. MTP29N15E , MTP2P50E . , MTP3055V. , MTP40N10E. MTP5P25. , MTP6P20E. , SMFT3055VL , SMFT3055VLT1. STB23P06V , STB23P06VT4 , STB29N15E ,
Part Number | MTP2P50E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 500V 2A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1183pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 75W (Tc) |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
MTP2P50E
STMicroel
11196
0.76
CIS Ltd (CHECK IC SOLUTION LIMITED)
MTP2P50E
STMICROELECT
90
1.49
Guofanghui (Hong Kong) Technology Co., Limited
MTP2P50E
ST/MICRON
33920
2.22
Shenzhen Everbell Technology Co.Ltd
MTP2P50E
ST
13580
2.95
Shenzhen Everbell Technology Co.Ltd
MTP2P50E
STMicroelectronics
100000
3.68
ALPHA TECHNOLOGY LTD