Part Number | MTD6N20ET4G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 200V 6A DPAK |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.75W (Ta), 50W (Tc) |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
MTD6N20ET4G
STMicroel
1466
0.06
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MTD6N20ET4G
STMICROELECT
2065
1.26
CRYSTALTEK CO., LIMITED
MTD6N20ET4G
ST/MICRON
201
2.46
Belt (HK) Electronics Co
MTD6N20ET4G
ST
7847
3.66
FLOWER GROUP(HK)CO.,LTD
MTD6N20ET4G
STMicroelectronics
2880
4.86
Cicotex Electronics (HK) Limited