Description
MRFG35010MT1 . 1. RF Device Data. Freescale Semiconductor. Gallium Arsenide PHEMT. RF Power Field Effect Transistor. Designed for WLL/MMDS/ BWA or MRFG35010NT1 MRFG35010MT1 BWA. 1. RF Reference Design Data. Freescale Semiconductor. RF Reference Design Library. Gallium Arsenide PHEMT.
Part Number | MRFG35010MT1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - RF |
Brand | STMicroelectronics |
Description | FET RF 15V 3.55GHZ 1.5-PLD |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | pHEMT FET |
Frequency | 3.55GHz |
Gain | 10dB |
Voltage - Test | 12V |
Current Rating | - |
Noise Figure | - |
Current - Test | 180mA |
Power - Output | 9W |
Voltage - Rated | 15V |
Package / Case | PLD-1.5 |
Supplier Device Package | PLD-1.5 |
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MRFG35010MT1
STMicroel
16000
1.1
Finestock Electronics HK Limited
MRFG35010MT1
STMICROELECT
49
2.16
JFJ Electronics Co.,Limited
MRFG35010MT1
ST/MICRON
1045
3.22
CIS Ltd (CHECK IC SOLUTION LIMITED)
MRFG35010MT1
ST
199436
4.28
Cicotex Electronics (HK) Limited
MRFG35010MT1
STMicroelectronics
34730
5.34
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED