Description
Datasheet MMUN2233LT1G , SMMUN2233LT1G*. A8K. SOT 23. (Pb Free). 3000 / Tape & Reel. NSVMMUN2233LT3G*. A8K. SOT 23. (Pb Free). 10000 / Tape & Reel. Nov 26, 2014 MMUN2233LT1G MUN5214DW1T1G NSBC113EDXV6T1G. DTC124EM3T5G MMUN2234LT1G MUN5214T1G. NSBC114EDXV6T1G. Oct 14, 2008 MMUN2233LT1G . MMUN2234LT1. MMUN2234LT1G. MMUN2238LT1G. NSVMMUN2232LT1G. SMMUN1003LT1. SMMUN1003LT1G. Jan 24, 2014 MMUN2233LT1G . MUN5213DW1T1G. MUN5314DW1T1G. MMUN2234LT1G. MUN5213DW1T3G. MUN5330DW1T1G. MMUN2236LT1G. Sep 10, 2015 MMBT2907ALT1G. MMUN2111LT1G. MMBT2907ALT1G. MMUN2236LT1G. BCX19LT1G. MMUN2235LT1G. BCX19LT1G. MMUN2233LT1G .
Part Number | MMUN2233LT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | STMicroelectronics |
Description | TRANS PREBIAS NPN 246MW SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 246mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
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