Description
DATASHEET xx = GM for MMBTA56LT1G ,. SMMBTA56LT1G. M. = Date Code*. G. = Pb-Free Package. (Note: Microdot may be in either location). MARKING DIAGRAM. Sep 10, 2015 MMBT2907ALT1G. MMBTA63LT1G. MMBT2907ALT1G. MMBTA56LT3G. MMBT2907ALT1G. MMBTA56LT1G . MMBT2907ALT1G Aug 10, 2016 Cree. MHBAWT-0000-000N0BD265E. No. Yes. Q1. 1. PNP Bipolar Transistor SMD. N/A. N/A. SOT-23. ON Semiconductor. MMBTA56LT1G . No. V(BR)CEO. Min (V). hFE Min. hFE Max. fT Min. (MHz). PTM Max. (W). Package. Type. MMBTA56LT1G . AEC. Qualified. Pb-free. Halide free. Active. PNP. General . Oct 16, 2007 5/1/08. K. MMBTA55LT1. 5/1/08. K. MMBTA55LT1G. 5/1/08. K. MMBTA55LT3. 5/1 /08. K. MMBTA55LT3G. 5/1/08. K. MMBTA56LT1G . 5/1/08. K.
Part Number | MMBTA56LT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | STMicroelectronics |
Description | TRANS PNP 80V 0.5A SOT23 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
Power - Max | 225mW |
Frequency - Transition | 50MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
Hot Offer
MMBTA56LT1G
ST/MICRON
30000
1.46
HONG KONG CHIPLINK TECHNOLOGY LIMITED
MMBTA56LT1G
ST
320
2.13
Top Era Technology Industrial Co., Limited
MMBTA56LT1G
STMicroelectronics
592
2.8
ANCHIP TECHNOLOGY CO., LIMITED
MMBTA56LT1G
STMicroel
325364
0.12
HK HEQING ELECTRONICS LIMITED
MMBTA56LT1G
STMICROELECT
6500
0.79
FINECHIPS ELECTRONICS (HK) CO.,LIMITED