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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

www.fairchildsemi.com. BS170 / MMBF170 Rev. E2. 1. March 2010. BS170 / MMBF170 . N-Channel Enhancement Mode Field Effect Transistor. General Jul 14, 2015 MMBF170 . SOT23-3 (Discrete-. G). Jul 14, 2015. 1.0. FSCP. 0.008706 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Feb 27, 2009 MMBF170 -13. MMBF170 -7. MMBF170 -7-F. 2N7002K-7. DMN601DMK-7. DMN601DWK-7. DMN601K-7. DMN601TK-7. DMN601VK-7. Jun 28, 2007 MMBF170 -7-F. 202. MMDT2222A-13. 17. ASMCC0096-7. 79. BAW56-13-01-F. 141. MMBT2222A-13. 203. MMDT2222A-7. 18. ASMCC0096-7-

Part Number MMBF170
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 60V 500MA SOT-23
Series -
Packaging Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 300mW (Ta)
Rds On (Max) @ Id, Vgs 5 Ohm @ 200mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.65   Highest Price: $5.91
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