Part Number | MKI50-12E7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Modules |
Brand | STMicroelectronics |
Description | MOD IGBT H-BRIDGE 1200V 90A E2 |
Series | - |
IGBT Type | NPT |
Configuration | Full Bridge Inverter |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 90A |
Power - Max | 350W |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
Current - Collector Cutoff (Max) | 800µA |
Input Capacitance (Cies) @ Vce | 3.8nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 125°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | E2 |
Supplier Device Package | E2 |
Image |
MKI50-12E7
STMicroel
4148
1.39
E-Future Co., Limited
MKI50-12E7
STMICROELECT
8250
2.1225
E-Future Co., Limited
MKI50-12E7
ST/MICRON
8255
2.855
THJ(HK)Technology Limited
MKI50-12E7
ST
2870
3.5875
MY Group (Asia) Limited
MKI50-12E7
STMicroelectronics
9768
4.32
Cinty Int'l (HK) Industry Co., Limited