Description
MJE802 . NPN power Darlington transistor. Features. Good hFE linearity. High fT frequency. Monolithic Darlington configuration with integrated JEx0yG. COLLECTOR 2, 4. BASE. 3. EMITTER 1. COLLECTOR 2, 4. BASE. 3. EMITTER 1. NPN. PNP. MJE800. MJE700. MJE802 . MJE702. MJE803. MJE703 MJE802 : 4.0 A, 80 V NPN Darlington Bipolar Power Transistor. For complete documentation, see the data sheet. The Darlington Bipolar Power Transistor is MJE802 . MAXIMUM RATINGS: (TC=25 C). SYMBOL. MJE801. MJE803. UNITS. Collector-Base Voltage. VCBO. 60. 80. V. Collector-Emitter Voltage. VCEO. 60. MJE802 . MJE702. 4.0. 40. 80. 80. 750. - -. 1,500. 2.5. 1.5. 1.0. MJE803. MJE703. 4.0. 40. 80. 80. 750. - -. 2,000. 2.8. 2.0. 1.0. MJE3439. 0.3. 15. 450. 350. 50. 200.
Part Number | MJE802 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | STMicroelectronics |
Description | TRANS NPN DARL 80V 4A SOT-32 |
Series | - |
Packaging | Tube |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
Power - Max | 40W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | SOT-32 |
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