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Description
DATASHEET MJE210 . Feature. Low Collector-Emitter Saturation Voltage. High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) Complement to MJE200. STMicroelectronics PREFERRED. SALESTYPE s. PNP TRANSISTOR. DESCRIPTION. The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 MJE200. MJE210 . 0.02 t, TIME (ms). 0.01. 0.02. 0.05. 1.0. 2.0. 5.0. 10. 20. 50. 100 . 200. 0.1. 0.5. 0.2. 1.0. 0.2. 0.1. 0.05 r(t), TRANSIENT THERMAL RESISTANCE. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. COMMON. -Voff. 500 F. MPF930. MTP8P10. MUR105. MJE210 . MTP12N10. MTP8P10. 150 . 3 W. 100 F. Iout. A. RB1. RB2. 1 F. IC PEAK. VCE PEAK. VCE.
Part Number | MJE210 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | STMicroelectronics |
Description | TRANS PNP 40V 5A TO225AA |
Series | - |
Packaging | Bulk |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
Power - Max | 15W |
Frequency - Transition | 65MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-225AA |
Image | ![]() |
MJE210
STMicroel
6184
1.65
HK HEQING ELECTRONICS LIMITED
MJE210
STMICROELECT
38665
2.495
Shenzhen Lichengda Technology Co.,LIMITED
MJE210
ST/MICRON
3977
3.34
Belt (HK) Electronics Co
MJE210
ST
9414
4.185
CIS Ltd (CHECK IC SOLUTION LIMITED)
MJE210
STMicroelectronics
50406
5.03
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED