STMicroelectronics

Description

MJD45H11 (PNP). Complementary Power. Transistors. DPAK for Surface Mount Applications. Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features. Lead Formed for Surface Mount Application in Plastic May 18, 2012 MJD45H11 . Complementary power transistors. Datasheet production data. Features. Low collector-emitter saturation voltage. Fast switching speed. Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix T4). Applications. Power amplifier. Switching circuits. Description. Aug 29, 2017 Type of notification: This is a Final Product/Process Change Notification (FPCN) sent to customers. FPCNs are issued 90 days prior to implementation of the change. ON Semiconductor will consider this change accepted, unless an inquiry is made in writing within 30 days of delivery of this notice. To do so MJD44H11. , MJD44H11-001 , MJD44H11RL , MJD44H11T4. MJD45H11 . , MJD45H11 -001 , MJD45H11RL , MJD45H11T4. MJD47. , MJD47T4. , MJD50. , MJD50-001. MJD50T4. , MJD5731T4 , MJD6039T4 , MLD1N06CLT4. MLD2N06CL , MLD2N06CLT4 , MSRD620CT , MSRD620CTT4. MTD10N05E1 , MTD10N05ET4 Feb 19, 2004 MJD45H11 - NPN. QUAL LOT CONTROL. Iebo. Veb=5V <5.00E-5. Amp Avg/Sd 1.83E-10 / 6.55E-11. 1.70E-10 / 4.00E-11. Ices. Vcb=80V <1.00E-5. Amp Avg/Sd 7.25E-10 / 5.23E-10. 6.69E-10 / 2.38E-11. BVceo. IC=30mA >80V. Volt Avg/Sd 106.6 / 2.9 117.8 / 1.1. hFE. 2A/1V >60. Avg/Sd 135.1 / 2.4 117.2 /