Description
Datasheet The MGF0915A GaAs FET with an N-channel schottky. Gate, is designed for use L & S band amplifiers. FEATURES. High output power. Po=36.5dBm(TYP.) MITSUBISHI. Date. : 8 th. Dec. 2005. SUBJECT: SUMMARY: This application note show the RF characteristics data of MGF0915A . Sample history:. May 25, 2005 RF characteristics data of MGF0915A for Freq.=2.11-2.17GHz band. HIGH FREQUENCY & OPTICAL DEVICE WORKS. MITSIBISHI ELECTRIC MITSUBISHI. Date. : 5 th. Apr. 2005. SUBJECT: SUMMARY: This application note show the RF characteristics data of MGF0915.A. Sample history:. MITSUBISHI. Date. : 8 th. Dec. 2005. SUBJECT: SUMMARY: This application note show the RF characteristics data of MGF0915A . Sample history:.
Part Number | MGF0915A |
Brand | STMicroelectronics |
Image |
MGF0915A
STMicroel
15000
0.95
Ysx Tech Co., Limited
MGF0915A
STMICROELECT
1391
1.4625
TERNARY UNION CO., LIMITED
MGF0915A
ST/MICRON
196294
1.975
Cicotex Electronics (HK) Limited
MGF0915A
ST
28741
2.4875
N&S Electronic Co., Limited
MGF0915A
STMicroelectronics
20
3
FLOWER GROUP(HK)CO.,LTD