Description
Jul 11, 2011 LET20030C . RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs. Features. Excellent thermal LET20030C . M243. 2000. 30. 14.8. 28. 42. 1.2. LET20045C. M243. 2000. 45. 14. 28. 48. 1. Gain and efficiency @ 860 MHz. Gain and efficiency @ 2 GHz.
Part Number | LET20030C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - RF |
Brand | STMicroelectronics |
Description | FET RF 80V 2GHZ M243 |
Series | - |
Packaging | Bulk |
Transistor Type | LDMOS |
Frequency | 2GHz |
Gain | 13.9dB |
Voltage - Test | 28V |
Current Rating | 9A |
Noise Figure | - |
Current - Test | 400mA |
Power - Output | 45W |
Voltage - Rated | 80V |
Package / Case | M243 |
Supplier Device Package | M243 |
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