Description
Page 1. 2005 IXYS All rights reserved. Symbol. Test Conditions. Maximum Ratings. VDSS. TJ. = 25 C to 150 C. -200. V. VDGR. TJ. = 25 C to 150 C; RGS IXTH24P20 . 6090 TA06a. OUT. 0.1. 33.2k. 40.2. 1nF. 2.49k. 1k. CZT5551. 1N4148. CZT5401. 1N4148. * USE SEVERAL SERIES RESISTORS TO REDUCE IX5B. 6.59 x 6.59. 259 x 259. 12 mil x 3. IXTH16P20. IXTD24P20-7B. 0.16. IX7B. 8.84 x 7.18. 348 x 283. 15 mil x 3. IXTH24P20 . IXTD8P50-5B. 5. 0. 0. 1.20. IX5B. 303 IXTH24P20 . TP1003. -160. 125. 1000. 30. 0. 30000. 304 IXTH250N075T. SP0801. 60. 125. 1000. 30. 0. 30000. 305 IXTH260N055T2. SP0830. 44. 125. IXTH24P20 . 6090 TA06a. OUT. 0.1. 33.2k. 40.2. 1nF. 2.49k. 1k. CZT5551. 1N4148. CZT5401. 1N4148. * USE SEVERAL SERIES RESISTORS TO REDUCE
Part Number | IXTH24P20 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 200V 24A TO-247AD |
Series | - |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 (IXTH) |
Package / Case | TO-247-3 |
Image |
IXTH24P20
STMicroel
18000
1.6
Bonase Electronics (HK) Co., Limited
IXTH24P20
STMICROELECT
8473
2.34
ATLANTIC TECHNOLOGY LIMITED
IXTH24P20
ST/MICRON
100000
3.08
ALPHA TECHNOLOGY LTD
IXTH24P20
ST
13188
3.82
Yingxinyuan INT'L (Group) Limited
IXTH24P20
STMicroelectronics
3000
4.56
INSO (INCREDIBLE SOLUTION) HK LIMITED