Part Number | IXFN36N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 36A SOT-227B |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 36A |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 325nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9000pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 520W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |
Image |
IXFN36N60
STMicroel
16000
1.13
Finestock Electronics HK Limited
IXFN36N60
STMICROELECT
5766
2.3075
GLOBAL CHIP TRADING (HK) LIMITED
IXFN36N60
ST/MICRON
11355
3.485
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
IXFN36N60
ST
5409
4.6625
Dedicate Electronics (HK) Limited
IXFN36N60
STMicroelectronics
18000
5.84
MY Group (Asia) Limited