Part Number | IXFN24N100 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 1KV 24A SOT-227B |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 24A |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 267nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 8700pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 568W (Tc) |
Rds On (Max) @ Id, Vgs | 390 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |
Image |
IXFN24N100
STMicroel
65
0.83
Bonase Electronics (HK) Co., Limited
IXFN24N100
STMICROELECT
800
1.825
Belt (HK) Electronics Co
IXFN24N100
ST/MICRON
400
2.82
Top Electronics Co.,
IXFN24N100
ST
18000
3.815
STXW(HK)Technology Limited
IXFN24N100
STMicroelectronics
2358
4.81
ALLCHIPS ELECTRONICS LIMITED