Part Number | IXFN120N20 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 200V 120A SOT-227B |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 120A |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 360nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9100pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 600W (Tc) |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |
Image |
IXFN120N20
STMicroel
18650
1.8
Fairstock HK Limited
IXFN120N20
STMICROELECT
2000
3.185
Bonase Electronics (HK) Co., Limited
IXFN120N20
ST/MICRON
4500
4.57
YLT TRADE CO., LIMITED
IXFN120N20
ST
3000
5.955
Yilufa Electronics Limited
IXFN120N20
STMicroelectronics
100000
7.34
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED