Description
Datasheet 2006 IXYS All rights reserved. DS99563E(01/06). PolarHVTM HiPerFET. Power MOSFET. ISOPLUS264TM. (Electrically Isolated Back Surface). V. DSS. = 500 V. 30000. 24. IXFL100N50P . SP0549. 16. 125. 1000. 30. 0. 30000. 25. IXFL82N60P . SP0550. 16. 125. 1000. 30. 0. 30000. 26. IXFP12N50PM. K550. 16. 125. 1000. DESIGN TIP. DT 99-2. International Rectifier 233 Kansas Street El Segundo CA 90245 USA. Estimating T. J of SO-8 Power MOSFETs by David Jauregui. Semiconductor Components Industries, LLC, 2014. February, 2014 Rev. 1. 1. Publication Order Number: AND9042/D. AND9042/D. MOSFET Transient IXFL100N50P . SP0549. 16. 125. 1000. 30. 0. 30000. 28. IXFL60N80P. SP0605. 16. 125. 1000. 30. 0. 30000. 29. IXFL82N60P. SP0550. 16. 125. 1000. 30. 0.
Part Number | IXFL100N50P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 500V 70A ISOPLUS264 |
Series | HiPerFET, PolarHT |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 20000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 625W (Tc) |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ISOPLUS264 |
Package / Case | ISOPLUS264 |
Image |
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