Description
Datasheet ABSTRACT. As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power conversion 47 IXFK90N30 . SP 0244. 240. 125. 1000. 30. 0. 30000. 48 IXFN36N100. SP 0229. 800. 125. 1000. 30. 0. 30000. 49 IXFX27N80Q. SP 0236. 640. 125. 1000. 30. 35 IXFK90N30 . 0244. 240. 125. 1000. 30. 0. 30000. 36 IXFN36N100. 0116. 800. 105. 1000. 27. 0. 27000. 37 IXFN36N100. 0229. 800. 125. 1000. 30. 0. 30000. IXFK73N30Q. IXFD90N30-9X. 0.040. IX9X. 14.20 x 10.60. 559 x 417. 15 mil x 6. IXFK90N30 . IXFD130N30-9Y. 0.028. IX9Y. 15.81 x 14.31. 623 x 563. 12 mil x 12. IXFK90N30 . SP 0244. 125. 100. 10000. 24. 0. 240000. 13. IXFR4N100Q. TP 0149. 125. 100. 10000. 24. 0. 240000. 14. IXFX27N80Q. SP 0236. 125. 100. 10000.
Part Number | IXFK90N30 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 300V 90A TO-264 |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 360nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 560W (Tc) |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 45A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-264AA (IXFK) |
Package / Case | TO-264-3, TO-264AA |
Image |
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