Part Number | IXFH80N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V 80A TO-247 |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 40A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) |
Package / Case | TO-247-3 |
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IXFH80N10
STMicroel
9139
1
Xinye International Technology Limited
IXFH80N10
STMICROELECT
9677
1.885
ALPINE ELECTRONICS LTD
IXFH80N10
ST/MICRON
4285
2.77
Digchip Technology Co.,Limited
IXFH80N10
ST
3951
3.655
Hong Kong In Fortune Electronics Co., Limited
IXFH80N10
STMicroelectronics
9310
4.54
MY Group (Asia) Limited