Description
Datasheet IRLML5203 . HEXFET. . Power MOSFET. These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the. H = IRLML5203 . LOT. CODE. Notes: This part marking information applies to devices produced after 02/26/2001. W = (1-26) IF PRECEDED BY LAST DIGIT OF Sep 6, 2005 L1. 1.2uH. Q1. IRLML5203 . R1. 0.1. R2. R3. C6. 10uF. C3. 100pF. 10K. 10K. 10BQ015. C1 1uF. C4. 10uF. PACKAGE ORDER INFORMATION. G = IRLML2502. H = IRLML5203 . Note: A line above the work week. (as shown here) indicates Lead-free. Micro3 (SOT-23 / TO-236AB) Part Marking Information. H = IRLML5203 . LOT. CODE. Notes: This part marking information applies to devices produced after 02/26/2001. W = (1-26) IF PRECEDED BY LAST DIGIT OF
Part Number | IRLML5203 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 30V 3A SOT-23 |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Rds On (Max) @ Id, Vgs | 98 mOhm @ 3A, 10V |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | Micro3,SOT-23 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
Hot Offer
IRLML5203
STMicroelectronics
1130
5.14
GOLDEN SHELL (HK) ELECTRONICS CO., LIMITED
IRLML5203
STMicroel
6000
1.22
Shenzhen Qiangneng Electronics Co., Ltd.
IRLML5203
STMICROELECT
35800
2.2
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRLML5203
ST/MICRON
500
3.18
WIN AND WIN ELECTRONICS LIMITED
IRLML5203
ST
200000
4.16
Shenzhen WTX Capacitor Co., Ltd.