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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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01/14/09 www.irf.com. 1. HEXFET Power MOSFET. S. D. G. PD -97363. IRLB3034PbF . G. D. S. Gate. Drain. Source. VDSS. 40V. RDS(on) typ. 1.4m: max. 1.7m IRLB3034PBF *. IRLP3034PBF*. 40. 5.9. 200. 75. IRL1404ZSPBF. IRL1404ZPBF. 40. 6.5. 130. 40. IRLR3114ZPBF. 55. 12. 89. 44. IRLR3705ZPBF. 55. 22.5. 60. StrongIRFET . IRFS7430-7PPbF. 1 www.irf.com 2014 International Rectifier. Submit Datasheet Feedback. November 6, 2014. HEXFET Power MOSFET. D. IRLB3034PBF . 1.7. IRF7480MTRPBF. 1.2. IRFH7084TRPBF. 1.25. IRLS3034PBF. 1.7. IRLS3034-7PPBF. 1.4. IRFB7434PBF. 1.6. IRF7739L1TRPBF . 1.0. IRLB3034PBF IRLP3034PBF. 40. 1.75. 340. 160. IRFS3004PBF1. IRFB3004PBF1. 40. 2.0. 270. 160. IRF2804SPBF. 40. 2.3. 270. 160. IRF2804PBF . 40. 3.1. 5.9.

Part Number IRLB3034PBF
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 40V 195A TO220AB
Series HEXFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 162nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 10315pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Rds On (Max) @ Id, Vgs 1.7 mOhm @ 195A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.95   Highest Price: $3.61
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STMicroel

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ST/MICRON

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Top Era Technology Industrial Co., Limited

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Shenzhen Xinderun Electronic Technology Co., Ltd.

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IRLB3034PBF

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STMicroelectronics

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57500

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