Description
Jan 5, 2004 HEXFET Power MOSFET. IRL3803 . PD - 91301D l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance. Page 1. IRL3803PbF. PD - 94996 www.irf.com. 1. 2/10/04. LeadrFree. Page 2. IRL3803PbF. 2 www.irf.com. Page 3. IRL3803PbF www.irf.com. 3 Apr 1, 2005 Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Uses IRL3803 data Nov 11, 2002 soldering techniques refer to application note #AN-994. Uses IRL3803 data and test conditions. Source-Drain Ratings and Characteristics. SENSE . DBST. IN5819. 12V. VIN. 28V. CIN. 1500 F. 63V. 3. IRL3803 . IRL3103D2. 2. L1. 10 H. VOUT. 5V AT 20A. RFB2. 1k. RFB1. 3k. LT1339. + CBST.
Part Number | IRL3803 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 140A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 5000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 71A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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