Description
Datasheet INSULATED GATE BIPOLAR TRANSISTOR WITH. ULTRAFAST SOFT RECOVERY DIODE. IRGB4056DPbF . 1 www.irf.com. 04/11/08. E. G n-channel. C. IRGB4056DPBF . Trench IGBT. 60%. Part. Number. Package. Type. Voltage. Rated Current. TCASE = 100 C VGE = 15V. VCE(on). ETS, at Rated Current,. IRGB4056DPBF . Trench IGBT. 60%. Package. Voltage. IC (Rated. Current). VCE( on). (typ). @25 C. ETS typ. (mJ). @25 C. TO-262. D-PAK. D2PAK. TO-220. Oct 6, 2008 For optimum electrical results, die attach temperature should not exceed 300 C. Reference Packaged Part. IRGB4056DPbF . Test Conditions.
Part Number | IRGB4056DPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | IGBT 600V 24A 140W TO220AB |
Series | - |
Packaging | Tube |
IGBT Type | Trench |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 24A |
Current - Collector Pulsed (Icm) | 48A |
Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 12A |
Power - Max | 140W |
Switching Energy | 75µJ (on), 225µJ (off) |
Input Type | Standard |
Gate Charge | 25nC |
Td (on/off) @ 25°C | 31ns/83ns |
Test Condition | 400V, 12A, 22 Ohm, 15V |
Reverse Recovery Time (trr) | 68ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Image |
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