Description
Datasheet Aug 11, 2004 10 lbf in (1.1 N m). IRG4BC20KD -SPbF. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT. RECOVERY DIODE. Features. Dec 23, 2003 Parameter. Max. Units. VCES. Collector-to-Emitter Voltage. 600. V. IC @ TC = 25 C. Continuous Collector Current. 16. IC @ TC = 100 C. IRG4BC20KD -S IRG4BC20KD . 9. 2.21. 8-30 kHz. 10. 1.19. 1.40. IRG4IBC30KD. 10. 1.60. 8-30 kHz. 5. 0.23. 2.50. IRGS4064D. IRGB4064D. 10. 1.70. 8-30 kHz. Assuming identical capacitors at 120V input: TABLE 21: IGBT AND FET COMPARISON. Type. Part #. Imax. RDS(ON)/. VCE(ON). IGBT IRG4BC20KD - SPbF 16A. 120V . 280 F. 21 . IGBT FET . . . Imax. RDS(ON)/. VCE(ON). IGBT IRG4BC20KD -SPbF 16A. NA/2.27V. FET.
Part Number | IRG4BC20KD |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | IGBT 600V 16A 60W TO220AB |
Series | - |
Packaging | Tube |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 16A |
Current - Collector Pulsed (Icm) | 32A |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 9A |
Power - Max | 60W |
Switching Energy | 340µJ (on), 300µJ (off) |
Input Type | Standard |
Gate Charge | 34nC |
Td (on/off) @ 25°C | 54ns/180ns |
Test Condition | 480V, 9A, 50 Ohm, 15V |
Reverse Recovery Time (trr) | 37ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Image |
IRG4BC20KD
STMicroel
50272
1.2
Belt (HK) Electronics Co
IRG4BC20KD
STMICROELECT
115749
2.035
Cicotex Electronics (HK) Limited
IRG4BC20KD
ST/MICRON
21852
2.87
N&S Electronic Co., Limited
IRG4BC20KD
ST
11150
3.705
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRG4BC20KD
STMicroelectronics
14352
4.54
N&S Electronic Co., Limited