STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low 12). c. ISD 30 A, dI/dt 200 A/ s, VDD VDS, TJ 175 C. d. 1.6 mm from case. e. Uses IRFZ34 , SiHFZ34 data and test conditions. PRODUCT SUMMARY. ISD 30 A, dI/dt 200 A/ s, VDD VDS, TJ 175 C. d. 1.6 mm from case. e. Uses IRFZ34 , SiHFZ34 data and test conditions. PRODUCT SUMMARY. VDS (V). Sep 1, 2010 DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical Aug 25, 1997 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

Part Number IRFZ34
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 60V 30A TO-220AB
Series -
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 88W (Tc)
Rds On (Max) @ Id, Vgs 50 mOhm @ 18A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.45   Highest Price: $5.89
1 - 5 of 5 Record(s)
Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

IRFZ34

Brand:

STMicroel

D/C:
Qty:

1000

Price (USD):

0.45

Company:

MY Group (Asia) Limited

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Part Number:

IRFZ34

Brand:

STMICROELECT

D/C:
21+
Qty:

115732

Price (USD):

1.81

Company:

Cicotex Electronics (HK) Limited

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Part Number:

IRFZ34

Brand:

ST/MICRON

D/C:
Qty:

22500

Price (USD):

3.17

Company:

HK HEQING ELECTRONICS LIMITED

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Part Number:

IRFZ34

Brand:

ST

D/C:
Qty:

170

Price (USD):

4.53

Company:

Gallop Great Holdings (Hong Kong) Limited

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Part Number:

IRFZ34

Brand:

STMicroelectronics

D/C:
17+
Qty:

25500

Price (USD):

5.89

Company:

CIS Ltd (CHECK IC SOLUTION LIMITED)

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IRFZ34 Ref.

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