Part Number | IRFS3306PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 60V 120A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4520pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 230W (Tc) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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IRFS3306PBF
STMicroel
193
0.73
Semic Pte. Ltd
IRFS3306PBF
STMICROELECT
800
1.915
RX ELECTRONICS LIMITED
IRFS3306PBF
ST/MICRON
40
3.1
Gallop Great Holdings (Hong Kong) Limited
IRFS3306PBF
ST
33800
4.285
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFS3306PBF
STMicroelectronics
115683
5.47
Cicotex Electronics (HK) Limited