Description
Feb 6, 2008 Absolute Maximum Ratings. Symbol. Parameter. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V (Silicon Limited). ID @ TC IRFP4368 . 75V. 350A. 1.85 mOhm. 380 nC. TO-247AC. Through-Hole Packages 100 - 250V. Part Number. Voltage. ID @ TC = 25 C. RDs(on) max @ 10V. Jun 23, 1999 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 20. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. IRFP4368 . 100. 8.7. 190. 6.9. IRFU120Z. 18. 72.5. 15. IRFB4212. 36. 26.5. 42. IRF540Z. 42. 36. 73.3. IRFP150M. 43. 9.3. 81. IRFI4410Z. 56. 18. 69. IRFU3710Z. Dec 15, 2009 Description. This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma
Part Number | IRFP4368 |
Brand | STMicroelectronics |
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IRFP4368
STMicroel
22702
1.68
HK HEQING ELECTRONICS LIMITED
IRFP4368
STMICROELECT
169
2.7525
AIC Semiconductor Co., Limited
IRFP4368
ST/MICRON
22703
3.825
Yingxinyuan INT'L (Group) Limited
IRFP4368
ST
790
4.8975
WIN AND WIN ELECTRONICS LIMITED
IRFP4368
STMicroelectronics
10000
5.97
Xiefeng (HK) INT'L Electronics Limited