Part Number | IRFP4110PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V 120A TO-247AC |
Series | HEXFET |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9620pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 370W (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |
Image |
Hot Offer
IRFP4110PBF
STMicroel
1700
1.54
MING JIA IC TECHNOLOGY CO.,LIMITED
IRFP4110PBF
STMICROELECT
8000
2.95
HEXING TECHNOLOGY (HK) LIMITED
IRFP4110PBF
ST/MICRON
2400
4.36
ACHIEVE ELECTRONICS CO., LIMITED
IRFP4110PBF
ST
2000
5.77
HONGKONG HUIZHONGDINGTAI ELECTRONIC TECHNOLOGY LIMITED
IRFP4110PBF
STMicroelectronics
600
7.18
Antony Electronic Ltd.