Description
script type=text/javascript language=javascript src=/B1D671CF-E532-4481-99AA-19F420D90332/netdefender/hui/ndhui.js?0=0&0=0&0=0> Datasheet Jun 15, 1999 IRFL024N . HEXFET Power MOSFET. S. D. G. VDSS = 55V. RDS(on) = 0.075 . ID = 2.8A. Fifth Generation HEXFETs from International PMGD8000LN. HUF75307T3ST. PHT11N06LT. HUFA75307T3ST. PHT11N06LT . IRFL014N. PHT8N06LT. IRFL024N . PHT11N06LT. IRFL024Z. PHT11N06LT.
Part Number | IRFL024N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 55V 2.8A SOT223 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 2.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |
Image |
IRFL024N
STMicroel
6000
1.05
Shenzhen Qiangneng Electronics Co., Ltd.
IRFL024N
STMICROELECT
72320
2.055
IC Chip Co., Ltd.
IRFL024N
ST/MICRON
56010
3.06
KYO Inc.
IRFL024N
ST
55200
4.065
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFL024N
STMicroelectronics
239878
5.07
Cicotex Electronics (HK) Limited