Description
S10-2466-Rev. C, 25-Oct-10. 1. Power MOSFET. IRFD9020 , SiHFD9020. Vishay Siliconix. FEATURES. Dynamic dv/dt Rating. Repetitive Avalanche Rated. Jun 9, 2005 IRFD9020 www.irf.com. 7. P.W.. Period di/dt. Diode Recovery dv/dt. Ripple 5% . Body Diode. Forward Drop. Re-Applied. Voltage. Reverse. Aug 4, 2010 DS41369B-page 10. 2011 Microchip Technology Inc. (10) 1 Jumper Wires. (4) IRFD9020 P-CH MOSFETs. (4) IRFD010 N-CH MOSFETs. Jun 10, 2011 IRFD9020 . Q3. 1K. R16. D3. 10K. R10. 13K. R3. 10K. R1. 2N4400. Q1 IRFD9020 . Q4. 22. R15. 10K. R9. 2N4400. Q6. PRIM DC. 1K. R6. 360.
Part Number | IRFD9020 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 60V 1.6A 4-DIP |
Series | - |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 960mA, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Package / Case | 4-DIP (0.300", 7.62mm) |
Image |
IRFD9020
STMicroel
12484
1.37
HK HEQING ELECTRONICS LIMITED
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STMICROELECT
425
1.9325
Yingxinyuan INT'L (Group) Limited
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ST/MICRON
2000
2.495
Ande Electronics Co., Limited
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ST
239838
3.0575
Cicotex Electronics (HK) Limited
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2000
3.62
CIS Ltd (CHECK IC SOLUTION LIMITED)