Description
Mar 21, 2011 Package. TO-220AB. Lead (Pb)-free. IRFBG30PbF . SiHFBG30-E3. SnPb. IRFBG30. SiHFBG30. ABSOLUTE MAXIMUM RATINGS (TC = 25 C,
Part Number | IRFBG30PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 1000V 3.1A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 980pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 1.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
IRFBG30PBF
STMicroel
12800
0.16
N&S Electronic Co., Limited
IRFBG30PBF
STMICROELECT
3300
1.035
TOP-Q COMPONENT PTE. LTD
IRFBG30PBF
ST/MICRON
162
1.91
ShenZhen Inborun Technology Co.Ltd
IRFBG30PBF
ST
18000
2.785
Kinghead Electronics Co.,Limited
IRFBG30PBF
STMicroelectronics
10000
3.66
XINZAN TECHNOLOGY LIMITED