STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

IRFBE30 , SiHFBE30. Vishay Siliconix. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; Page 1. Document Number: 90443 www.vishay.com. Revision: 20-Apr-10. 1. R-C Thermal Model Parameters. IRFBE30_RC, SiHFBE30_RC. Vishay Siliconix. IRFBE30 . MOSFET, N-ch, 800-V, 4.1-A, 3-Ohms. TO-220V. IRFBE30 . International Rectifier. 2. R10, R12. 1k. Resistor, Chip, 1/16W, 1%. 0603. Std. Std. 1. R100. IRFBE30 . 800. 3000. 4.1. 2.6. 52. 30. 2. 125. IRFBE30PBF. 800. 3000. 4.1. 2.6. 52. 30. 2. 125. IRFBE20. 800. 6500. 1.8. 1.2. 25.3. 14. 2.3. 54. IRFBE20PBF. 800. Jul 7, 2005 IRFBE30 . MOSFET 900V. C1, C2. Panasonic. ECU-S2A222KBA. 2200pF, 5%, 100V, X7R. C3, C4. Panasonic. EEU-FCIC821S. 820 F, 16V

Part Number IRFBE30
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 800V 4.1A TO-220AB
Series -
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 3 Ohm @ 2.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.9   Highest Price: $6.86
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IRFBE30

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ST

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KST Components Limited

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IRFBE30

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STMicroelectronics

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HK FEILIDI ELECTRONIC CO., LIMITED

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IRFBE30

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STMicroel

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150

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Yingxinyuan INT'L (Group) Limited

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IRFBE30

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STMICROELECT

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21380

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N&S Electronic Co., Limited

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IRFBE30**

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ST/MICRON

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49800

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CIS Ltd (CHECK IC SOLUTION LIMITED)

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IRFBE30 Ref.

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