STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

DATASHEET Mar 21, 2011 SiHFBC30-E3. SnPb. IRFBC30 . SiHFBC30. ABSOLUTE MAXIMUM RATINGS ( TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. On Semi. 1. Q4. IRFBC30 . MOSFET, N-ch, 600-V, 3.6-A, 1.8-Ohms. IRFBC30 . IR. 1. Q5. MMBT3906TT1. Bipolar, PNP, -40V, -200mA, -200mW. MMBT3906TT1. To be determined. Inductor, 4.0mH, 1.5Apk with 2 secondary windings of 4 turns. L3, L3A,L3B. 25. 3 International Rectifier IRFBC30 . Transistor, MOSFET. Sep 15, 2008 Uses IRFBC30 , SiHFBC30 data and test conditions. PRODUCT SUMMARY. VDS (V). 600. RDS(on) ( ). VGS = 10 V. 2.2. Qg (Max.) (nC). 31.

Part Number IRFBC30
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 600V 3.6A TO-220AB
Series -
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 74W (Tc)
Rds On (Max) @ Id, Vgs 2.2 Ohm @ 2.2A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.67   Highest Price: $5.66
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Part Number:

IRFBC30**

Brand:

STMicroel

D/C:
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48800

Price (USD):

0.67

Company:

Ande Electronics Co., Limited

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Part Number:

IRFBC30

Brand:

STMICROELECT

D/C:
Qty:

4856

Price (USD):

1.9175

Company:

Belt (HK) Electronics Co

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Part Number:

IRFBC30

Brand:

ST/MICRON

D/C:
22+
Qty:

2600

Price (USD):

3.165

Company:

ALLCHIPS ELECTRONICS LIMITED

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Part Number:

IRFBC30 +

Brand:

ST

D/C:
22+
Qty:

13500

Price (USD):

4.4125

Company:

N&S Electronic Co., Limited

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Part Number:

IRFBC30

Brand:

STMicroelectronics

D/C:
Qty:

11200

Price (USD):

5.66

Company:

N&S Electronic Co., Limited

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IRFBC30 Ref.

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