Description
Datasheet Mar 21, 2011 IRFB9N60A , SiHFB9N60A. Vishay Siliconix. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. 8.5E+06. 107. Total. 1141. 2. 5.3E+08. 6. TO-220, N-channel, High Voltage. IRFB16N60K. 232. 150. 480. 80. 1000. 0. 8.5E+06. 107. IRFB9N60A . 209. 150. 480. 22 uH. Inductor, Through hole, 7A. 0.860 x 0.450 inch. 2105-V. JWMiller. 1. Q1. IRFB9N60A . MOSFET, N-ch, 600-V, 9.2-A, 0.75- . TO-220V. IRFB9N60A . Vishay . Feb 15, 2007 IL 060 320 51 01. Resonant Inductor, 2 mH, 2 A peak. LRES. 28. 3. International Rectifier. IRFB9N60A . Transistor, MOSFET. MPFC, MHS, MLS. IRFB9N60A . Transistor, MOSFET. MPFC. 8. 1. Fairchild. Semiconductor. DF10S. Bridge Rectifier. BR1. 9. 6. Diodes Inc. LL4148-13. Diode. DCP1, DOUT,. DSD1
Part Number | IRFB9N60A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 9.2A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 170W (Tc) |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 5.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
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